• UMC 0.135 µm Embedded High Voltage process
• 230,000 gates/mm 2 raw gate density offers the density needed for applications with ultra-high density and porosity
• All inputs are gated and all cells are static
• Area-efficient circuit/layout style
• Supports a complete set of models for industry-standard EDA tools
• Supports characterization range of 1.5 V ± 10%
• Operating temperature range: -40 °C ~ 125 °C
• All the flip-flops have the corresponding scan cells
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