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UMC 0.25µm Logic Process |
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UMC L250 Library |
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UMC L250 Logic Process Features |
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FS90A_C_GENERIC_CORE |
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- UMC 0.25μm 2.5V Logic Process
- Raw gate density: 67,000 gates/mm2 offers high density needed for low cost applications
- Wide drive strength range and optimized P/N ratio for performance
- Complete set of models for industry-standard EDA tools
- Support arithmetic cells for data-path designs
- Full set of gated clock buffers for power saving
- Each cell has at least one sub/ well contact
- Flexible row abutment
- Built-in decoupling capacitance to aid IR drop in filler cells
- View Details
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FS90A_C_Generic_I/O_Cells |
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- UMC's 0.25μm 2.5V/3.3V Logic Process
- 3.3V input, 3.3V output drive
- Output buffer with programmable drive strength from 2mA to 16mA with 2mA step
- Input buffer with programmable pull up resistance, pull down resistance, keeper, and Schmitt trigger
- Built-in Antenna diodes for all pins
- ESD Robustness and Latch-up immunity proven by Silicon
- View Details:FS90A_C_T33_GENERIC_IO
- UMC's 0.25µm 2.5V/3.3V Logic Process
- 3.3V with 5V tolerance input, 3.3V output drive
- Output buffer with programmable drive strength from 2mA to 8mA with 2mA step, 4mA to 16mA with 4mA step
- Input buffer with programmable pull up resistance, pull down resistance, keeper, and Schmitt trigger
- Built-in Antenna diodes for all pins
- ESD Robustness and Latch-up immunity proven by Silicon
- View Details: FS90A_C_50VT_GENERIC_IO
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FS90A_C_T25_OSC_IO |
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- UMC's 0.25μm 2.5V/3.3V logic process
- High frequency oscillator pad range : 1MHz ~ 66MHz
- Low frequency oscillator pad range : 32KHz ~ 1MHz
- Programmable output driving capability
- Oscillation mode / power down (stop) mode / tri-state mode / parallel model
- Internal feedback resistance
- Built-in antenna diodes for all input pins from core
- Dedicated power and ground for noise immunity
- ESD robustness and latch-up immunity proven by silicon
- View Details: (only "High" provided in AIP Free Lib)
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FS90A_C_T33_ANALOGESD_IO |
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- UMC's 0.25μm 2.5V/3.3V Logic Process
- 3.3V ESD protection cells for analog I/O
- 3.3V Power / Ground cells with ESD protection
- Power-cut cells with ESD protection to separate 3.3V analog blocks from digital
- ESD robustness and Latch-up immunity proven by silicon
- View Details
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FS90A_C_SU (I Port SRAM) |
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- Operating voltage range: 2.25V ~ 2.75V
- Operating junction temp. range: 0 °C ~ 115°C
- Recommended operating ambient temp. range: 0°C ~ 85°C
- Minimum metal requirement: 4 metal layers
- Synchronous read and write operation
- One (1) read / write port
- Fully customized layout density
- High speed - 266 MHz (4K x 16, worst case)
- Automatic power down mechanism to eliminate DC current
- Clocked address inputs into RAM with CK rising edge
- Clocked WEB inputs into RAM with CK rising edge
- Clocked DI inputs into RAM with CK rising edge
- Byte write and word write operations available
- Different aspect ratios to best fit chip floor plan
- Variable capacity: maximum 512K bits
- Tri-state output buffer
- View Details
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FS90A_C_SY (1 Port RF) |
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- Operating voltage range: 2.25V ~ 2.75V
- Operating junction temp. range: -40°C ~ 125°C
- Recommended operating ambient temp. range: 0°C ~ 85°C
- Minimum metal requirement: 4 metal layers
- Synchronous read and write operation
- Fully customized layout density
- Automatic power down to eliminate DC current
- Clocked address inputs and CSB to RAM at CK rising edge
- Clocked WEB input pin to RAM at CK rising edge
- Clocked DI input pins to RAM at CK rising edge
- Byte write or word write operations available
- Memory compiler preview UI (Memaker)
- BIST code supported
- Column mux options for the best aspect ratio
- View Details
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FS90A_C_SZ (2 Port RF) |
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- Operating voltage range: 2.25V ~ 2.75V
- Operating junction temp. range: -40°C ~ 125°C
- Recommended operating ambient temp. range: 0°C ~ 85°C
- Minimum metal requirement: 4 metal layers
- Synchronous read and write operations
- Fully customized layout density
- Automatic power down to eliminate DC current
- Clocked address inputs and CSA(B)N to RAM with CKA(B) rising edge
- Clocked WEB input pins to RAM with CKB rising edge
- Clocked DI input pins to RAM with CKB rising edge
- Byte write or word write operations available
- Verilog/VHDL timing/simulation model generator
- SPICE netlist generator
- GDSII layout database
- Memory compiler preview UI (Memaker)
- Column mux options for the best aspect ratio
- View Details
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FS90A_C_SP (VIA ROM) |
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- Operating voltage range: 2.25 ~ 2.75 V
- Operating junction temp. range: -40 ~ 125 °C
- Recommended operating ambient temp. range: 0 ~ 85 °C
- Minimum metal requirement: 5 metal layers
- Synchronous read operation
- Fully customized layout density
- Automatic power down to eliminate DC current
- Clocks address inputs and CS to ROM at CK rising edge
- VIA-1 layer programmable codes
- Verilog/VHDL timing/simulation model generator
- SPICE netlist generator
- GDSII layout database
- Memory compiler preview UI (Memaker)
- BIST code supported
- Multi-block options for the best aspect ratio
- View Details
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PLL9019 |
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- UMC 0.25μm 2.5V logic process
- Operating voltage range: 2.25V ~ 2.75V
- Operating junction temperature range: 0℃ ~ 125℃
- IP's minimum metal requirement: 3 metal layers
- Input frequency range: 5MHz ~ 100MHz
- Output frequency range: 20MHz ~ 270 MHz
- Low jitter clock output
- 2.5V single power source
- 7-bit programmable pre-divider
- 7-bit programmable loop divider
- Built-in isolated PLL testing circuit
- Power-down mode
- Bypass mode
- Built-in loop filter
- View Details
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