• FS80V_S_GENERIC_CORE + FS80V_S_ECO_M1_CORE

• 3.3 V operating voltage
• UMC 0.30 µm embedded high voltage process
• Raw gate density: 34.5k gates/mm 2
• A wider range of drive strength and optimized P/N ratio for high performance
• A complete set of models for industry-standard EDA tools
• High density and high porosity
• 3.3 V ± 10% characterization range
• Supports 3-corner timing models
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